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2N6784 PDF预览

2N6784

更新时间: 2024-11-25 14:56:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 1032K
描述
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6784 with Hermetic Packaging

2N6784 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.08其他特性:AVALANCHE RATED
雪崩能效等级(Eas):48 mJ配置:SINGLE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):2.25 A
最大漏极电流 (ID):2.25 A最大漏源导通电阻:1.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-205AF
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):15 W
最大脉冲漏极电流 (IDM):9 A认证状态:Not Qualified
参考标准:MILITARY STANDARD (USA)子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N6784 数据手册

 浏览型号2N6784的Datasheet PDF文件第2页浏览型号2N6784的Datasheet PDF文件第3页浏览型号2N6784的Datasheet PDF文件第4页浏览型号2N6784的Datasheet PDF文件第5页浏览型号2N6784的Datasheet PDF文件第6页浏览型号2N6784的Datasheet PDF文件第7页 
PD-90424E  
IRFF210  
JANTX2N6784  
JANTXV2N6784  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTORS  
200V, N-CHANNEL  
REF: MIL-PRF-19500/556  
THRU-HOLE TO-205AF (TO-39)  
Product Summary  
Part Number  
BVDSS  
RDS(on)  
ID  
IRFF210  
200V  
2.25A  
1.5  
Description  
Features  
The HEXFET® technology is the key to International  
Rectifier’s HiRel advanced line of power MOSFET transistors.  
The efficient geometry and unique processing of this latest  
“State of the Art” design achieves: very low on state  
resistance combined with high trans conductance.  
Repetitive Avalanche Ratings  
Dynamic dv/dt Rating  
Hermetically Sealed  
Simple Drive Requirements  
ESD Rating: Class 1A per MIL-STD-750,  
Method 1020  
The HEXFET transistors also feature all of the well  
established advantages of MOSFETs such as voltage  
control, very fast switching and temperature stability of the  
electrical parameters.  
They are well suited for applications such as switching power  
supplies, motor controls, inverters, choppers, audio amplifiers  
and high energy pulse circuits.  
Absolute Maximum Ratings  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current  
2.25  
A
1.50  
9.0  
IDM @ TC = 25°C  
PD @ TC = 25°C  
Pulsed Drain Current  
W
W/°C  
V
Maximum Power Dissipation  
Linear Derating Factor  
15  
0.12  
± 20  
48  
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
mJ  
A
IAR  
EAR  
Avalanche Current   
2.25  
1.5  
mJ  
V/ns  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
dv/dt  
5.0  
TJ  
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
Weight  
-55 to + 150  
TSTG  
°C  
g
300 (0.063 in. /1.6 mm from case for 10s)  
0.98 (Typical)  
For Footnotes, refer to the page 2.  
1
2018-12-04  
International Rectifier HiRel Products, Inc.  

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