Datasheet > 2N6716

2N6716

更新时间： 2024-02-25 20:37:48

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	387K
描述
NPN Plastic Encapsulated Transistor

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技术参数
数据手册

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2N6716 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.67
Base Number Matches：	1

2N6716 数据手册

2N6716 / 2N6717 / 2N6718

1A , 100V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92

FEATURES



High Voltage：V_CEO= 100V

Gain of 20 @ I_C= 0.5A



Emitter

Base

Collector

Millimeter

REF.

Collector

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51





Base

1.27 TYP.

1.10

2.42

0.36

2.66

0.76



Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

2N6716

2N6717

2N6718

2N6716

2N6717

2N6718

Collector to Base Voltage

V_CBO

100

Collector to Emitter Voltage

V_CEO

100

Emitter to Base Voltage

V_EBO

I_C

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

P_D

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

2N6716

2N6717

2N6718

2N6716

2N6717

2N6718

100

Collector to Base

Breakdown Voltage

V_(BR)CBO

I_C=100μA, I_E=0

Collector to Emitter

Breakdown Voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=1mA, I_B=0

Emitter to Base Breakdown Voltage

2N6716

I_E=1mA, I_C=0

V_CB=60V, I_E=0

V_CB=80V, I_E=0

V_CB=100V, I_E=0

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

2N6717

2N6718

2N6716

2N6717

2N6718

μA

I_EBO

μA

V_EB=5V, I_C=0

h_{FE (1)}

h_{FE (2)}

h_{FE (3)}

250

V_CE=1V, I_C=50mA

V_CE=1V, I_C=250mA

V_CE=1V, I_C=500mA

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

18-Jan-2011 Rev. A

Page 1 of 3

12 3

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