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2N6676 PDF预览

2N6676

更新时间: 2024-11-28 05:57:43
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无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
3页 118K
描述
Silicon NPN Power Transistors

2N6676 数据手册

 浏览型号2N6676的Datasheet PDF文件第2页浏览型号2N6676的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6676 2N6677 2N6678  
DESCRIPTION  
·With TO-3 package  
·High voltage capability  
·Fast switching speeds  
·Low saturation voltage  
APPLICATIONS  
Designed for high voltage switching  
applications such as :  
·Off-line power supplies  
·Converter circuits  
·Pulse width modulated regulators  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
450  
550  
650  
300  
350  
400  
8
UNIT  
2N6676  
2N6677  
2N6678  
2N6676  
2N6677  
2N6678  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
15  
Collector current-peak  
Base current  
20  
A
5
A
PT  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
Tc=25  
175  
200  
-65~200  
W
Tstg  

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