Datasheet > 2N6674

2N6674

更新时间： 2024-09-25 06:19:19

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
2页	164K
描述
isc Silicon NPN Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N6674 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

2N6674/6675

DESCRIPTION

·High Power Dissipation

·High Switching Speed

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 300V(Min)- 2N6674

= 400V(Min)- 2N6675

APPLICATIONS

Designed for high voltage switching applications such as:

·Switching regulators

·Inverters

·Solenoid and relay drivers

·Deflection circuits

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

450

650

300

400

450

650

UNIT

2N6674

2N6675

2N6674

2N6675

2N6674

2N6675

V_CBO

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

V_CEX

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

I_C

Collector Current-Continuous

Base Current-Continuous

I_B

5.0

Collector Power Dissipation@T_a=25℃

Collector Power Dissipation@T_C=25℃

Junction Temperature

P_C

175

200

-65~200

T_J

℃

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.0

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与2N6674相关器件

型号	品牌	获取价格	描述	数据表
2N6674#N/A	CENTRAL	获取价格	Power Bipolar Transistor,
2N6674LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 15A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N6674PBFREE#N/A	CENTRAL	获取价格	Power Bipolar Transistor,
2N6675	JMNIC	获取价格	Silicon NPN Power Transistors
2N6675	ISC	获取价格	isc Silicon NPN Power Transistors
2N6675	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N6675	NJSEMI	获取价格	POWER TRANSISTORS
2N6675	MICROSEMI	获取价格	NPN Darlington Transistors
2N6675	CENTRAL	获取价格	Power Transistors
2N6675	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3