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2N6659 PDF预览

2N6659

更新时间: 2024-09-16 22:35:55
品牌 Logo 应用领域
SEME-LAB 晶体晶体管
页数 文件大小 规格书
2页 22K
描述
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

2N6659 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:compliant
风险等级:5.19Is Samacsys:N
外壳连接:DRAIN配置:SINGLE
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N6659 数据手册

 浏览型号2N6659的Datasheet PDF文件第2页 
2N6659  
MECHANICAL DATA  
Dimensions in mm (inches)  
N–CHANNEL  
ENHANCEMENT MODE  
MOS TRANSISTOR  
8.89 (0.35)  
9.40 (0.37)  
7.75 (0.305)  
8.51 (0.335)  
4.19 (0.165)  
4.95 (0.195)  
0.89  
(0.035)  
max.  
FEATURES  
12.70  
(0.500)  
min.  
7.75 (0.305)  
8.51 (0.335)  
dia.  
• Switching Regulators  
• Converters  
5.08 (0.200)  
typ.  
• Motor Drivers  
2.54  
2
(0.100)  
1
3
0.66 (0.026)  
1.14 (0.045)  
0.71 (0.028)  
0.86 (0.034)  
45˚  
TO–39 METAL PACKAGE  
Underside View  
PIN 1 – Source  
PIN 2 – Gate  
PIN 3 – Drain  
CASE – Drain  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
CASE  
V
V
Drain – Source Voltage  
Gate – Source Voltage  
Drain Current  
35V  
±20V  
DS  
GS  
I
I
I
@ T  
= 25°C  
1.4A  
D
CASE  
Drain Current  
@ T  
= 100°C  
1A  
D
CASE  
Pulsed Drain Current *  
Power Dissipation  
Power Dissipation  
3A  
DM  
P
P
@ T  
@ T  
= 25°C  
6.25W  
2.5W  
D
D
CASE  
= 100°C  
CASE  
T
T
T
Operating Junction Temperature Range  
–55 to 150°C  
–55 to 150°C  
300°C  
j
Storage Temperature Range  
stg  
L
1
Lead Temperature ( / ” from case for 10 sec.)  
16  
* Pulse width limited by maximum junction temperature.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Prelim. 4/00  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  

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