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2N6594E3 PDF预览

2N6594E3

更新时间: 2024-10-15 03:07:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网晶体管
页数 文件大小 规格书
1页 79K
描述
Power Bipolar Transistor, 12A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,

2N6594E3 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.75
最大集电极电流 (IC):12 A集电极-发射极最大电压:40 V
最小直流电流增益 (hFE):15JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:PNP
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM晶体管元件材料:SILICON
Base Number Matches:1

2N6594E3 数据手册

  

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2A, 650V N-CHANNEL POWER MOSFET