型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6594E3 | MICROSEMI |
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Power Bipolar Transistor, 12A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
2N6594LEADFREE | CENTRAL |
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Power Bipolar Transistor, 12A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 | |
2N6595 | NXP |
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TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72, BIP RF Small Signal | |
2N6596 | NXP |
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TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72, BIP RF Small Signal | |
2N6597 | NXP |
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TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72, BIP RF Small Signal | |
2N6598 | NXP |
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TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72, BIP RF Small Signal | |
2N6599 | NXP |
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UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72 | |
2N65-C | UTC |
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N-CH | |
2N65-CA | UTC |
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N-CH | |
2N65G | UMW |
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种类:N-Channel;漏源电压(Vdss):650V;持续漏极电流(Id)(在25°C |