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2N6594 PDF预览

2N6594

更新时间: 2024-11-23 06:18:23
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页数 文件大小 规格书
3页 120K
描述
Silicon PNP Power Transistors

2N6594 数据手册

 浏览型号2N6594的Datasheet PDF文件第2页浏览型号2N6594的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N6594  
DESCRIPTION  
·With TO-3 package  
·Complement to type 2N6569  
·Wide area of safe operation  
APPLICATIONS  
·Designed for low voltage amplifier  
power switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
-45  
UNIT  
V
Open base  
-40  
V
Open collector  
-5  
V
-12  
A
ICM  
Collector current-peak  
Base current  
-24  
A
IB  
-5  
A
IE  
Emitter current  
-17  
A
IEM  
Emitter current-peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
-34  
A
PC  
TC=25ꢀ  
100  
200  
-65~200  
W
Tj  
Tstg  

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种类:N-Channel;漏源电压(Vdss):650V;持续漏极电流(Id)(在25°C