是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.26 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 25 | JEDEC-95代码: | TO-202 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN (315) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 75 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6553N | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-202VAR | |
2N6553PBFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, | |
2N6554 | CENTRAL |
获取价格 |
Power Transistors | |
2N6554 | NJSEMI |
获取价格 |
COLLECTOR-EMITTER VOLTAGE | |
2N6554LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/ | |
2N6554N | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-202VAR | |
2N6555 | CENTRAL |
获取价格 |
Power Transistors | |
2N6555 | NJSEMI |
获取价格 |
COLLECTOR-EMITTER VOLTAGE | |
2N6555 | TI |
获取价格 |
1A, 80V, PNP, Si, POWER TRANSISTOR, TO-202 | |
2N6555LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/ |