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2N6547 PDF预览

2N6547

更新时间: 2024-11-03 22:49:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
2页 59K
描述
NPN POWER SILICON TRANSISTOR

2N6547 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-3
包装说明:CASE 1-06, 3 PIN针数:2
Reach Compliance Code:compliant风险等级:5.1
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):15 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):6
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):175 W
认证状态:Not Qualified参考标准:MIL-19500/525
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):6 MHzBase Number Matches:1

2N6547 数据手册

 浏览型号2N6547的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 525  
Devices  
Qualified Level  
JAN  
2N6546  
2N6547  
JANTX  
JANTXV  
MAXIMUM RATINGS  
2N6546 2N6547  
Ratings  
Symbol  
Units  
Vdc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
300  
600  
400  
850  
VCEO  
VCEX  
VEBO  
IB  
Vdc  
8
Vdc  
10  
Adc  
Collector Current  
15  
175  
100  
Adc  
W
W
0C  
IC  
Total Power Dissipation  
@ TC = +250C (1)  
@ TC = +1000C (1)  
PT  
Operating & Storage Temperature Range  
TO-3 (TO-204AA)*  
-65 to +200  
Top,  
T
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Thermal Resistance, Junction-to-Case  
1) Between TC = +250C and TC = +2000C, linear derating factor (average) = 1.0 W/0C  
Symbol  
Max.  
Unit  
0C/W  
1.0  
R
qJC  
*See Appendix A for Package  
Outline  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc  
Vdc  
2N6546  
2N6547  
V(BR)  
300  
400  
CEO  
Collector-Emitter Cutoff Current  
VCE = 600 Vdc; VBE = 1.5 Vdc  
VCE = 850 Vdc; VBE = 1.5 Vdc  
Emitter-Base Cutoff Current  
VEB = 8 Vdc  
2N6546  
2N6547  
mAdc  
mAdc  
ICEX  
1.0  
1.0  
IEBO  
1.0  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

2N6547 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N6547 MICROSEMI

完全替代

NPN POWER SILICON TRANSISTOR
2N6547 STMICROELECTRONICS

类似代替

MULTIEPITAXIAL MESA NPN
2N6546LEADFREE CENTRAL

功能相似

Power Bipolar Transistor, 15A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, TO-3, 3

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