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2N6530 PDF预览

2N6530

更新时间: 2024-11-01 13:47:55
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 80K
描述
8A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

2N6530 数据手册

 浏览型号2N6530的Datasheet PDF文件第2页浏览型号2N6530的Datasheet PDF文件第3页 
DATA SHEET  
2N6530  
2N6531  
2N6532  
2N6533  
NPN POWER TRANSISTOR  
TO-220 CASE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power  
applications requiring extremely high gain.  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
2N6530 2N6531 2N6532 2N6533  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Power Dissipation  
V
V
V
V
V
80  
80  
80  
80  
100  
100  
100  
100  
100  
100  
100  
100  
120  
120  
120  
120  
V
CBO  
CER  
CEV  
CEO  
EBO  
V
V
V
V
A
A
W
5.0  
8.0  
15  
I
I
C
CM  
P
65  
D
Operating and Storage  
Junction Temperature  
T ,T  
J stg  
-65 to +150  
1.92  
°C  
°C/W  
Thermal Resistance  
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
2N6530  
MIN MAX  
1.0  
2N6531  
MIN MAX  
1.0  
2N6532  
2N6533  
SYMBOL  
TEST CONDITIONS  
MIN MAX MIN MAX  
UNITS  
I
I
V
V
V
V
V
V
=Rated V  
=Rated V  
=1.5V  
1.0  
0.5  
1.0  
0.5  
mA  
CEO  
CEV  
CE  
CE  
EB  
CE  
EB  
EB  
CEO  
CEV,  
0.5  
0.5  
5.0  
5.0  
mA  
I
=Rated V  
5.0  
5.0  
5.0  
5.0  
5.0  
mA  
CEV  
CEV,  
=5.0V, T =125°C  
C
I
=5.0V  
5.0  
mA  
V
V
V
V
V
V
V
V
EBO  
BV  
BV  
BV  
I =200mA, R =100  
80  
80  
80  
100  
100  
100  
100  
120  
120  
120  
CER  
CEO  
CEV  
C
BE  
I =200mA  
100  
100  
C
I =200mA, V =1.5V  
C
EB  
V
V
V
V
V
V
I =3.0A, I =6.0mA  
3.0  
2.0  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
BE(ON)  
C
B
I =5.0A, I =10mA  
2.0  
3.0  
2.0  
3.0  
C
B
I =8.0A, I =80mA  
3.0  
2.8  
3.0  
2.8  
C
B
V
=3.0V, I =3.0A  
CE  
CE  
CE  
C
V
V
=3.0V, I =5.0A  
2.8  
4.5  
2.8  
4.5  
C
=3.0V, I =8.0A  
4.5  
4.5  
V
C
(CONTINUED ON REVERSE SIDE)  
R0  

2N6530 替代型号

型号 品牌 替代类型 描述 数据表
TIP131 CENTRAL

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8A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
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