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2N6520-BP PDF预览

2N6520-BP

更新时间: 2024-02-13 07:25:14
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
7页 331K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC, PACKAGE-3

2N6520-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.18最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:350 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHz最大关闭时间(toff):3500 ns
最大开启时间(吨):200 nsBase Number Matches:1

2N6520-BP 数据手册

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NPN  
M C C  
2N6515, 2N6517  
PNP  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
2N6519, 2N6520  
Features  
High Voltage  
Transistor  
625mW  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
·
·
·
·
Through Hole Package  
150 C Junction Temperature  
Voltage and Current are negative for PNP transistors  
Halogen free available upon request by adding suffix "-HF"  
TO-92  
A
E
Mechanical Data  
·
Case: TO-92, Molded Plastic  
B
·
Polarity: indicated as above.  
Maximum Ratings @ 25oC Unless Otherwise Specified  
C
Charateristic  
Symbol Value  
Unit  
Collector-Emitter Voltage  
2N6515  
2N6519  
250  
300  
350  
250  
300  
350  
VCEO  
VCBO  
VEBO  
V
2N6517, 2N6520  
Collector-Base Voltage  
2N6515  
2N6519  
V
2N6517, 2N6520  
Emitter-Base Voltage  
D
2N6515-6517  
2N6519-6520  
6.0  
5.0  
V
Base Current  
IB  
250  
500  
mA  
E
E
B
B
C
C
Collector Current(DC)  
IC  
mA  
W
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
0.625  
5.0  
1.5  
12  
Power Dissipation@TA=25oC  
G
Pd  
Pd  
R
mW/oC  
W
DIMENSIONS  
Power Dissipation@TC=25oC  
mW/oC  
oC/W  
INCHES  
MM  
Thermal Resistance, Junction to  
Ambient Air  
Thermal Resistance, Junction to Case  
Operating & Storage Temperature  
DIM  
A
B
C
D
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
.173  
MAX  
.185  
.185  
---  
.020  
.145  
.105  
.220  
MIN  
4.45  
4.45  
12.70  
0.41  
3.43  
2.42  
4.40  
MAX  
4.70  
4.70  
---  
0.63  
3.68  
2.67  
5.60  
NOTE  
200  
q
JA  
JC  
oC/W  
oC  
R
q
83.3  
Tj, TSTG  
-55~150  
E
Straight Lead  
Bent Lead  
G
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
www.mccsemi.com  
1 of 7  
Revision: D  
2013/01/01  

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