5秒后页面跳转
2N6513 PDF预览

2N6513

更新时间: 2024-09-26 03:56:23
品牌 Logo 应用领域
SEME-LAB 装置
页数 文件大小 规格书
1页 14K
描述
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

2N6513 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TO-3
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliant风险等级:5.2
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):7 A集电极-发射极最大电压:350 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

2N6513 数据手册

  
2N6513  
Dimensions in mm (inches).  
Bipolar NPN Device in a  
Hermetically sealed TO3  
Metal Package.  
25.15 (0.99)  
26.67 (1.05)  
6.35 (0.25)  
9.15 (0.36)  
10.67 (0.42)  
11.18 (0.44)  
1.52 (0.06)  
3.43 (0.135)  
1
2
Bipolar NPN Device.  
VCEO = 350V  
3
(case)  
3.84 (0.151)  
4.09 (0.161)  
IC = 7A  
7.92 (0.312)  
12.70 (0.50)  
All Semelab hermetically sealed products  
can be processed in accordance with the  
requirements of BS, CECC and JAN,  
JANTX, JANTXV and JANS specifications.  
TO3 (TO204AA)  
PINOUTS  
1 – Base  
2 – Emitter  
Case - Collector  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
350  
7
Units  
VCEO*  
IC(CONT)  
hFE  
V
A
@ 3/4 (VCE / IC)  
10  
50  
-
ft  
3M  
Hz  
W
PD  
120  
* Maximum Working Voltage  
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab plc.  
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Generated  
31-Jul-02  

与2N6513相关器件

型号 品牌 获取价格 描述 数据表
2N6513E3 MICROSEMI

获取价格

Power Bipolar Transistor, 7A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
2N6514 SAVANTIC

获取价格

Silicon NPN Power Transistors
2N6514 SEME-LAB

获取价格

Bipolar NPN Device in a Hermetically sealed TO3
2N6514 APITECH

获取价格

Transistor,
2N6514 NJSEMI

获取价格

Trans GP BJT NPN 300V 7A 3-Pin(2+Tab) TO-3
2N6514E3 MICROSEMI

获取价格

Power Bipolar Transistor, 7A I(C), 300V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
2N6515 ONSEMI

获取价格

High Voltage Transistors
2N6515 MCC

获取价格

High Voltage Transistor 625mW
2N6515 CENTRAL

获取价格

Small Signal Transistors
2N6515/D ETC

获取价格

High Voltage Transistors