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2N6508 PDF预览

2N6508

更新时间: 2024-09-24 22:35:51
品牌 Logo 应用领域
安森美 - ONSEMI 可控硅整流器
页数 文件大小 规格书
8页 54K
描述
Silicon Controlled Rectifiers

2N6508 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:CASE 221A-07, 3 PIN
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.07
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:30 mA最大直流栅极触发电压:1.5 V
最大维持电流:40 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
最大漏电流:2 mA通态非重复峰值电流:250 A
元件数量:1端子数量:3
最大通态电流:8000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):240认证状态:Not Qualified
最大均方根通态电流:25 A断态重复峰值电压:600 V
重复峰值反向电压:600 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30触发设备类型:SCR
Base Number Matches:1

2N6508 数据手册

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2N6504 Series  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls and power supply crowbar circuits.  
Glass Passivated Junctions with Center Gate Fire for Greater  
Parameter Uniformity and Stability  
http://onsemi.com  
Small, Rugged, Thermowatt Constructed for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Blocking Voltage to 800 Volts  
SCRs  
25 AMPERES RMS  
50 thru 800 VOLTS  
300 A Surge Current Capability  
Device Marking: Logo, Device Type, e.g., 2N6504, Date Code  
G
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
*Peak Repetitive Off–State Voltage (Note 1.)  
(Gate Open, Sine Wave 50 to 60 Hz,  
T = 25 to 125°C)  
J
V
V
Volts  
DRM,  
MARKING  
DIAGRAM  
RRM  
2N6504  
2N6505  
2N6507  
2N6508  
2N6509  
50  
100  
400  
600  
800  
4
TO–220AB  
CASE 221A  
STYLE 3  
YY WW  
650x  
On-State RMS Current  
I
25  
A
A
T(RMS)  
(180° Conduction Angles; T = 85°C)  
C
1
Average On-State Current  
I
T(AV)  
16  
2
x
= 4, 5, 7, 8 or 9  
YY = Year  
(180° Conduction Angles; T = 85°C)  
3
C
WW = Work Week  
Peak Non-repetitive Surge Current  
I
250  
20  
A
TSM  
(1/2 Cycle, Sine Wave 60 Hz, T = 100°C)  
J
PIN ASSIGNMENT  
Cathode  
Forward Peak Gate Power  
P
Watts  
Watts  
A
GM  
(Pulse Width 1.0 µs, T = 85°C)  
1
2
3
4
C
Anode  
Forward Average Gate Power  
P
G(AV)  
0.5  
2.0  
(t = 8.3 ms, T = 85°C)  
C
Gate  
Forward Peak Gate Current  
I
GM  
Anode  
(Pulse Width 1.0 µs, T = 85°C)  
C
Operating Junction Temperature Range  
T
J
–40 to  
+125  
°C  
ORDERING INFORMATION  
Storage Temperature Range  
T
–40 to  
+150  
°C  
stg  
Device  
Package  
TO220AB  
TO220AB  
TO220AB  
TO220AB  
TO220AB  
Shipping  
500/Box  
500/Box  
500/Box  
500/Box  
500/Box  
2N6504  
2N6505  
2N6507  
2N6508  
2N6509  
*Indicates JEDEC Registered Data  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
April, 2001 – Rev. 4  
2N6504/D  

2N6508 替代型号

型号 品牌 替代类型 描述 数据表
2N6509G LITTELFUSE

功能相似

该硅控整流器主要用于半波交流控制应用,例如电机控制、加热控制与电源消弧电路。 功能与特色:
2N6508G LITTELFUSE

功能相似

该硅控整流器主要用于半波交流控制应用,例如电机控制、加热控制与电源消弧电路。 功能与特色:
2N6507G LITTELFUSE

功能相似

该硅控整流器主要用于半波交流控制应用,例如电机控制、加热控制与电源消弧电路。 功能与特色:

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