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2N6507G PDF预览

2N6507G

更新时间: 2024-11-18 03:56:23
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器局域网
页数 文件大小 规格书
7页 64K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS

2N6507G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:LEAD FREE, CASE 221A-07, 3 PIN针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.07Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:170969
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220AB CASE221A-07
Samacsys Released Date:2015-11-03 12:30:39Is Samacsys:N
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:30 mA最大直流栅极触发电压:1.5 V
最大维持电流:40 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大漏电流:2 mA通态非重复峰值电流:250 A
元件数量:1端子数量:3
最大通态电流:8000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:25 A断态重复峰值电压:400 V
重复峰值反向电压:400 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

2N6507G 数据手册

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2N6504 Series  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls and power supply crowbar circuits.  
http://onsemi.com  
Features  
Glass Passivated Junctions with Center Gate Fire for Greater  
Parameter Uniformity and Stability  
SCRs  
25 AMPERES RMS  
50 thru 800 VOLTS  
Small, Rugged, Thermowatt Constructed for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Blocking Voltage to 800 Volts  
300 A Surge Current Capability  
Pb−Free Packages are Available*  
G
A
K
MARKING  
DIAGRAM  
4
2N650xG  
AYWW  
TO−220AB  
CASE 221A  
STYLE 3  
1
2
3
x
A
Y
= 4, 5, 7, 8 or 9  
= Assembly Location  
= Year  
WW = Work Week  
= Pb−Free Device  
G
PIN ASSIGNMENT  
Cathode  
1
2
3
4
Anode  
Gate  
Anode  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 7  
2N6504/D  

2N6507G 替代型号

型号 品牌 替代类型 描述 数据表
2N6509G LITTELFUSE

类似代替

该硅控整流器主要用于半波交流控制应用,例如电机控制、加热控制与电源消弧电路。 功能与特色:
2N6507TG ONSEMI

类似代替

Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800

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