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2N6497 PDF预览

2N6497

更新时间: 2024-12-02 14:53:59
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
19页 990K
描述
250V,5A,80W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage

2N6497 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.21
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
集电极-发射极最大电压:250 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):80 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):5 MHzBase Number Matches:1

2N6497 数据手册

 浏览型号2N6497的Datasheet PDF文件第2页浏览型号2N6497的Datasheet PDF文件第3页浏览型号2N6497的Datasheet PDF文件第4页浏览型号2N6497的Datasheet PDF文件第5页浏览型号2N6497的Datasheet PDF文件第6页浏览型号2N6497的Datasheet PDF文件第7页 
2N6497  
2N6498  
2N6499  
www.centralsemi.com  
DESCRIPTION:  
SILICON  
The CENTRAL SEMICONDUCTOR 2N6497, 2N6498,  
and 2N6499 are silicon NPN power transistors designed  
for high voltage amplifier applications.  
NPN POWER TRANSISTORS  
MARKING: FULL PART NUMBER  
TO-220 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
2N6497  
350  
2N6498  
400  
2N6499  
450  
UNITS  
V
C
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
250  
300  
6.0  
350  
V
V
Continuous Collector Current  
Peak Collector Current  
I
5.0  
A
C
I
10  
A
CM  
Continuous Base Current  
Power Dissipation  
I
2.0  
A
B
P
80  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
1.56  
°C  
°C/W  
J
stg  
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
2N6497  
2N6498  
MIN MAX  
2N6499  
MIN MAX  
SYMBOL  
TEST CONDITIONS  
MIN MAX  
UNITS  
mA  
I
V
V
V
V
=Rated V  
, V =1.5V  
-
1.0  
-
1.0  
-
1.0  
CEX  
CEX  
CE  
CE  
BE  
EB  
CBO BE  
I
=½Rated V  
,
CBO  
=1.5V, T =100°C  
-
10  
1.0  
-
-
10  
1.0  
-
-
10  
1.0  
-
mA  
mA  
V
C
I
=6.0V  
-
-
-
EBO  
BV  
I =25mA  
250  
300  
350  
CEO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
V
V
V
V
I =2.5A, I =500mA  
-
-
1.0  
5.0  
1.5  
2.5  
75  
-
-
-
1.25  
5.0  
1.5  
2.5  
75  
-
-
-
1.5  
5.0  
1.5  
2.5  
75  
-
V
C
B
I =5.0A, I =2.0A  
V
C
B
I =2.5A, I =500mA  
-
-
-
V
C
B
I =5.0A, I =2.0A  
-
-
-
V
C
B
h
h
V
=10V, I =2.5A  
10  
3.0  
5.0  
-
10  
3.0  
5.0  
-
10  
3.0  
5.0  
-
CE  
CE  
CE  
CB  
CC  
CC  
C
V
V
V
V
V
=10V, I =5.0A  
C
FE  
f
=10V, I =250mA, f=1.0MHz  
-
-
-
MHz  
pF  
T
C
C
=10V, I =0, f=100kHz  
150  
1.0  
150  
1.0  
150  
1.0  
ob  
E
t
t
=125V, I =2.5A, I =0.5A  
-
-
-
μs  
r
C
B1  
=125V, I =2.5A, V =5.0V,  
s
f
C
BE  
I
=I =0.5A  
-
-
2.5  
1.0  
-
-
2.5  
1.0  
-
-
2.5  
1.0  
μs  
μs  
B1 B2  
t
V
=125V, I =2.5A, I =I =0.5A  
B1 B2  
CC  
C
R1 (31-July 2013)  

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