是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-66 |
包装说明: | TO-66, 2 PIN | 针数: | 2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.27 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 225 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-66 |
JESD-30 代码: | O-MBFM-P2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 20 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6424E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 1A I(C), 225V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin, | |
2N6424LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1A I(C), 225V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 | |
2N6424PBFREE | CENTRAL |
获取价格 |
暂无描述 | |
2N6424TIN/LEAD | CENTRAL |
获取价格 |
Power Bipolar Transistor, | |
2N6425 | NJSEMI |
获取价格 |
SPRINGFIELD, NEW JERSEY 07081 | |
2N6425 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package | |
2N6425 | CENTRAL |
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Power Transistors | |
2N6425A | SEME-LAB |
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PNP | |
2N6425LEADFREE | CENTRAL |
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Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 | |
2N6426 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |