是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.72 |
JESD-609代码: | e3 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6424 | CENTRAL |
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Power Transistors | |
2N6424 | NJSEMI |
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SPRINGFIELD, NEW JERSEY 07081 | |
2N6424 | MICROSEMI |
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Power Bipolar Transistor, 1A I(C), 225V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin, | |
2N6424E3 | MICROSEMI |
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Power Bipolar Transistor, 1A I(C), 225V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin, | |
2N6424LEADFREE | CENTRAL |
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Power Bipolar Transistor, 1A I(C), 225V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 | |
2N6424PBFREE | CENTRAL |
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暂无描述 | |
2N6424TIN/LEAD | CENTRAL |
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Power Bipolar Transistor, | |
2N6425 | NJSEMI |
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SPRINGFIELD, NEW JERSEY 07081 | |
2N6425 | SEME-LAB |
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Bipolar PNP Device in a Hermetically sealed TO66 Metal Package | |
2N6425 | CENTRAL |
获取价格 |
Power Transistors |