Datasheet > 2N6398

2N6398

更新时间： 2024-09-24 05:57:03

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TECHNICAL SPECIFICATIONS OF SILICON CONTROLLED RECTIFIERS

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2N6398 数据手册

2N6395

THRU

2N6398

DC COMPONENTS CO., LTD.

DISCRETE SEMICONDUCTORS

TECHNICAL SPECIFICATIONS OF SILICON CONTROLLED RECTIFIERS

VOLTAGE RANGE - 100 to 600 Volts CURRENT - 12 Amperes

Description

* Driven directly with IC and MOS device

* Feature proprietary, void-free glass passivated chips

* Available in voltage ratings from 100 to 600 volts

* Non-sensitive gate trigger current

* Designed for high volume, line-powered control

application in relay lamp drivers, small motor controls,

gate drivers for large thyristors

TO-220AB

.185(4.70)

.173(4.40)

.405(10.28)

.380(9.66)

Pinning

1 = Cathode, 2 = Anode, 3 = Gate

.151

(3.83)

Typ

.055(1.39)

.045(1.15)

.295(7.49)

.220(5.58)

Absolute Maximum Ratings(TA=25oC)

.625(15.87)

.570(14.48)

Characteristic

Symbol

Rating

Unit

.350(8.90)

.330(8.38)

.640

Typ

2N6395

2N6396

2N6397

2N6398

100

200

400

600

(16.25)

Peak Repetitive Off-State

Voltage and Reverse Voltage

VDRM,

VRRM

On-State RMS Current

(TA=57oC, 180o Conduction Angles)

IT(RMS)

ITSM

.562(14.27)

.500(12.70)

.055(1.40)

.045(1.14)

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60Hz)

100

.037(0.95)

.030(0.75)

Forward Peak Gate Current

IGM

PGM

PG(AV)

2.0

.024(0.60)

.014(0.35)

.100

(2.54)

Typ

Forward Peak Gate Power Dissipation

Forward Average Gate Power Dissipation

Operating Junction Temperature

Storage Temperature

0.5

-40 to +110

-40 to +150

Dimensions in inches and (millimeters)

TSTG

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

Characteristic

Peak Repetitive Forward or Reverse

Off-State Blocking Current

Symbol

Min

Typ

Max

2000

2.2

2.0

Unit

Test Conditions

VAK=Rated VDRM or VRRM

RGK=1KΩ

TJ=25oC

IDRM, IRRM

µA

TJ=110oC

Peak Forward On-State Voltage

Continuous DC Gate Trigger Current

Continuous DC Gate Trigger Voltage

DC Holding Current

VTM

IGT

ITM=12A Peak

VAK=7V DC, RL=100Ω

RGK=1KΩ

VGT

Critical Rate-of-Rise of Off-State Voltage

Gate Controlled Turn-on Time(tD+tR)

Thermal Resistance, Junction to Case

dv/dt

Tgt

2.2

2.0

V/µS

µsec

oC/W

RGK=1KΩ

IGT=10mA

RθJC

中文翻译

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与2N6398相关器件

型号	品牌	获取价格	描述	数据表
2N6398-16	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220, 2
2N6398-A	MOTOROLA	获取价格	12A, 600V, SCR, TO-220AB
2N6398-AC	MOTOROLA	获取价格	暂无描述
2N6398-AD	MOTOROLA	获取价格	12A, 600V, SCR, TO-220AB
2N6398-AF	MOTOROLA	获取价格	12A, 600V, SCR, TO-220AB
2N6398-AJ	MOTOROLA	获取价格	12A, 600V, SCR, TO-220AB
2N6398-AK	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
2N6398-AN	MOTOROLA	获取价格	12A, 600V, SCR, TO-220AB
2N6398-BA	MOTOROLA	获取价格	12A, 600V, SCR, TO-220AB
2N6398-BC	MOTOROLA	获取价格	暂无描述