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2N6397TG

更新时间： 2024-11-27 21:06:43
品牌 Logo 应用领域
安森美 - ONSEMI 局域网栅栅极
页数 文件大小 规格书
5页 81K
描述
Silicon Controlled Rectifier - SCR, TO-220 3 LEAD STANDARD, 50-TUBE

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中文翻译

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2N6397TG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：LEAD FREE, CASE 221A-07, 3 PIN针数：3
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
Factory Lead Time：1 week风险等级：5.07
外壳连接：ANODE标称电路换相断开时间：35 µs
配置：SINGLE最大直流栅极触发电流：30 mA
最大直流栅极触发电压：1.5 V最大维持电流：50 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大漏电流：2 mA
通态非重复峰值电流：100 A元件数量：1
端子数量：3最大通态电流：12000 A
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大均方根通态电流：12 A
断态重复峰值电压：400 V重复峰值反向电压：400 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
触发设备类型：SCRBase Number Matches：1

2N6397TG 数据手册

 浏览型号2N6397TG的Datasheet PDF文件第2页浏览型号2N6397TG的Datasheet PDF文件第3页浏览型号2N6397TG的Datasheet PDF文件第4页浏览型号2N6397TG的Datasheet PDF文件第5页 
2N6394 Series  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half‐wave ac control applications, such as  
motor controls, heating controls and power supplies.  
Features  
http://onsemi.com  
•ăGlass Passivated Junctions with Center Gate Geometry for Greater  
Parameter Uniformity and Stability  
SCRs  
•ăSmall, Rugged, Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
•ăBlocking Voltage to 800 V  
12 AMPERES RMS  
50 thru 800 VOLTS  
•ăPb-Free Packages are Available*  
G
†
MAXIMUM RATING ꢀ (T = 25°C unless otherwise noted)  
J
A
K
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off-State Voltage (Note 1)  
V
DRM,  
V
(T = -40 to 125°C, Sine Wave,  
J
50 to 60 Hz, Gate Open)  
V
RRM  
MARKING  
DIAGRAM  
2N6394  
2N6395  
2N6397  
2N6399  
50  
100  
400  
800  
4
On‐State RMS Current  
(180° Conduction Angles; T = 90°C)  
I
12  
A
A
T(RMS)  
C
TO-220AB  
CASE 221A  
STYLE 3  
Peak Non‐Repetitive Surge Current  
(1/2 Cycle, Sine Wave, 60 Hz, T = 90°C)  
I
100  
2N639xG  
AYWW  
TSM  
J
2
2
Circuit Fusing (t = 8.3 ms)  
I t  
40  
20  
A s  
1
Forward Peak Gate Power  
(Pulse Width ≤ 1.0 ms, T = 90°C)  
P
W
W
A
GM  
2
C
3
Forward Average Gate Power  
(t = 8.3 ms, T = 90°C)  
P
0.5  
2.0  
G(AV)  
2N639x = Device Code  
x = 4, 5, 7, or 9  
C
Forward Peak Gate Current  
(Pulse Width ≤ 1.0 ms, T = 90°C)  
I
GM  
G
= Pb-Free Package  
C
A
= Assembly Location  
= Year  
= Work Week  
Y
WW  
Operating Junction Temperature Range  
T
J
-ā40 to +125  
-ā40 to +150  
°C  
°C  
Storage Temperature Range  
†
T
stg  
MAXIMUM RATINGSꢀ (T = 25°C unless otherwise noted)  
J
PIN ASSIGNMENT  
Cathode  
Rating  
Symbol  
Max  
2.0  
Unit  
°C/W  
°C  
1
Thermal Resistance, Junction-to-Case  
R
q
JC  
L
2
3
4
Anode  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 10 Seconds  
T
260  
Gate  
Anode  
†Indicates JEDEC Registered Data  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©ꢀ Semiconductor Components Industries, LLC, 2008  
April, 2008 - Rev. 7  
1
Publication Order Number:  
2N6394/D  
 
12345

中文翻译

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2N6397TG 替代型号

型号 品牌 替代类型 描述 数据表
2N6397G ONSEMI

完全替代

 Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS
2N6509G LITTELFUSE

功能相似

 该硅控整流器主要用于半波交流控制应用，例如电机控制、加热控制与电源消弧电路。 功能与特色:

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