2N6394 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies.
Features
http://onsemi.com
• Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 V
• Pb−Free Packages are Available*
G
†
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
A
K
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
V
V
V
DRM,
RRM
(T = −40 to 125°C, Sine Wave,
MARKING
DIAGRAM
J
50 to 60 Hz, Gate Open)
2N6394
2N6395
2N6397
2N6399
50
100
400
800
4
On-State RMS Current
(180° Conduction Angles; T = 90°C)
I
12
A
A
T(RMS)
C
TO−220AB
CASE 221A
STYLE 3
Peak Non-Repetitive Surge Current
I
100
2N639xG
AYWW
TSM
(1/2 Cycle, Sine Wave, 60 Hz, T = 90°C)
J
2
2
Circuit Fusing (t = 8.3 ms)
I t
40
20
A s
Forward Peak Gate Power
P
W
W
A
1
GM
2
(Pulse Width ≤ 1.0 ms, T = 90°C)
C
3
Forward Average Gate Power
P
0.5
2.0
G(AV)
2N639x = Device Code
x = 4, 5, 7, or 9
(t = 8.3 ms, T = 90°C)
C
Forward Peak Gate Current
I
GM
G
A
Y
WW
= Pb−Free Package
= Assembly Location
= Year
(Pulse Width ≤ 1.0 ms, T = 90°C)
C
Operating Junction Temperature Range
T
−40 to +125
−40 to +150
°C
°C
J
= Work Week
Storage Temperature Range
†
T
stg
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
PIN ASSIGNMENT
Cathode
Rating
Symbol
Max
2.0
Unit
°C/W
°C
1
Thermal Resistance, Junction−to−Case
R
q
JC
2
3
4
Anode
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 10 Seconds
T
260
L
Gate
Anode
†Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
1. V
and V
for all types can be applied on a continuous basis. Ratings
dimensions section on page 4 of this data sheet.
DRM
RRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2006 − Rev. 6
2N6394/D