Datasheet > 2N6387

2N6387

更新时间： 2024-11-18 06:26:31

品牌	Logo	应用领域
SAVANTIC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	95K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2N6387 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6386 2N6387 2N6388

DESCRIPTION

·With TO-220C package

·Complement to type 2N6666/6667/6668

·DARLINGTON

·High DC current gain

·Low collector saturation voltage

APPLICATIONS

·Designed for general-purpose amplifier

and low speed switching applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Tc=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6386

V_CBO

Collector-base voltage

Collector-emitter voltage

Open emitter

2N6387

2N6388

2N6386

2N6387

2N6388

V_CEO

Open base

V_EBO

Emitter-base voltage

Collector current-DC

Open collector

2N6386

I_C

2N6387/6388

I_CM

I_B

Collector current-Pulse

Base current-DC

ꢀ

0.25

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-65~150

T_stg

ꢀ

12 3

中文翻译

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与2N6387相关器件

型号	品牌	获取价格	描述	数据表
2N6387/D	ETC	获取价格	Plastic Medium-Power Transistors
2N6387_06	ONSEMI	获取价格	Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8
2N6387_07	ONSEMI	获取价格	Plastic Medium-Power Silicon Transistors
2N638716	MOTOROLA	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N638716A	MOTOROLA	获取价格	暂无描述
2N6387-6200	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2N6387-6203	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2N6387-6258	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2N6387-6261	RENESAS	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6387-6263	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast