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2N6371 PDF预览

2N6371

更新时间: 2024-11-02 07:29:07
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
3页 39K
描述
Silicon NPN Power Transistors

2N6371 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

2N6371 数据手册

 浏览型号2N6371的Datasheet PDF文件第2页浏览型号2N6371的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6371  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
·High dissipation capability  
·Excellent safe operating area  
APPLICATIONS  
·Series and shunt regulators  
·High-fidelity amplifiers  
·Power-switching circuits  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
50  
40  
Open base  
V
Open collector  
5
V
15  
A
IB  
Base current  
7
A
PD  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
117  
200  
-65~200  
W
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
1.5  
/W  

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