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2N6360 PDF预览

2N6360

更新时间: 2024-11-02 06:18:07
品牌 Logo 应用领域
SAVANTIC 晶体晶体管局域网
页数 文件大小 规格书
3页 111K
描述
Silicon NPN Power Transistors

2N6360 数据手册

 浏览型号2N6360的Datasheet PDF文件第2页浏览型号2N6360的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6360  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
·High DC current gain  
·Excellent safe operating area  
APPLICATIONS  
·Designed for high power applications  
and switching circuits such as relay  
or solenoid drivers, dc to dc converters  
or inverters.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
120  
100  
7
UNIT  
V
Open base  
V
Open collector  
V
12  
A
ICM  
Collector current-peak  
Base current  
24  
A
IB  
4
A
PD  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
150  
150  
-65~200  
W
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.17  
/W  

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