Datasheet > 2N6315

2N6315

更新时间： 2024-09-17 06:18:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
3页	131K
描述
Silicon NPN Power Transistors

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2N6315 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6315 2N6316

DESCRIPTION

·With TO-66 package

·Low collector saturation voltage

·Complement to type 2N6317/6318

APPLICATIONS

·Designed for general-purpose power

amplifier and switching applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6315

2N6316

2N6315

2N6316

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

Collector current-peak

Base current

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

200

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

1.94

℃/W

12 3

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