Datasheet > 2N6314

2N6314

更新时间： 2024-09-17 05:56:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	132K
描述
Silicon PNP Power Transistors

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2N6314 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6312 2N6313 2N6314

DESCRIPTION

·With TO-66 package

·Low collector saturation voltage

·Low leakage current

APPLICATIONS

·Designed for general-purpose power

amplifier and switching applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-40

UNIT

2N6312

2N6313

2N6314

2N6312

2N6313

2N6314

V_CBO

Collector-base voltage

Open emitter

-60

-80

-40

V_CEO

Collector-emitter voltage

Open base

-60

-80

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

-5

Collector current-peak

Base current

-10

-2

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

200

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

2.32

℃/W

12 3

中文翻译

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与2N6314相关器件

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2N6314LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2
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2N6315	SEME-LAB	获取价格	COMPLEMENTARY SILICON
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2N6315CLEADFREE	CENTRAL	获取价格	Transistor
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