Datasheet > 2N6308

2N6308

更新时间： 2024-09-17 06:18:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	129K
描述
Silicon NPN Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N6308 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6308

DESCRIPTION

·With TO-3 package

·High breakdown voltage

·High power dissipation

APPLICATIONS

·Designed for high voltage inverters,

switching regulators,line operated amplifiers,

and switching power supplies applications

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

700

350

UNIT

Open base

Open collector

I_B

Base current

P_T

Total power dissipation

Junction temperature

Storage temperature

T_c=25℃

125

200

-65~200

℃

T_j

T_stg

12 3

中文翻译

下载PDF

与2N6308相关器件

型号	品牌	获取价格	描述	数据表
2N6308LEADFREE	CENTRAL	获取价格	暂无描述
2N6308M	NJSEMI	获取价格	Trans GP BJT NPN 350V 8A 3-Pin(2+Tab) TO-3
2N6312	CENTRAL	获取价格	Power Transistors
2N6312	SAVANTIC	获取价格	Silicon PNP Power Transistors
2N6312	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO66
2N6312	BOCA	获取价格	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
2N6312	NJSEMI	获取价格	Trans GP BJT PNP 40V 10A 3-Pin(2+Tab) TO-66 Sleeve
2N6312LEADFREE	CENTRAL	获取价格	暂无描述
2N6312PBFREE	CENTRAL	获取价格	Power Bipolar Transistor,
2N6312TIN/LEAD	CENTRAL	获取价格	Power Bipolar Transistor,