Datasheet > 2N6307

2N6307

更新时间： 2024-11-07 07:29:07

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	111K
描述
Silicon NPN Power Transistors

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2N6307 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6307

DESCRIPTION

·With TO-3 package

·High breakdown voltage

·High power dissipation

APPLICATIONS

·Designed for high voltage inverters,

switching regulators,line operated amplifiers,

and switching power supplies applications

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

600

300

UNIT

Open base

Open collector

I_B

Base current

P_T

Total power dissipation

Junction temperature

Storage temperature

T_c=25ꢀ

125

200

-65~200

ꢀ

T_j

T_stg

ꢀ

12 3

中文翻译

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与2N6307相关器件

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2N6307-BP	MCC	获取价格	Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N6307LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
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2N6308	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3
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2N6308	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N6308	NJSEMI	获取价格	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
2N6308	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
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2N6308LEADFREE	CENTRAL	获取价格	暂无描述