Datasheet > 2N6306

2N6306

更新时间： 2024-11-09 06:18:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	129K
描述
Silicon NPN Power Transistors

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中文翻译

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2N6306 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6308

DESCRIPTION

·With TO-3 package

·High breakdown voltage

·High power dissipation

APPLICATIONS

·Designed for high voltage inverters,

switching regulators,line operated amplifiers,

and switching power supplies applications

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

700

350

UNIT

Open base

Open collector

I_B

Base current

P_T

Total power dissipation

Junction temperature

Storage temperature

T_c=25℃

125

200

-65~200

℃

T_j

T_stg

12 3

中文翻译

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与2N6306相关器件

型号	品牌	获取价格	描述	数据表
2N6306LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N6307	ISC	获取价格	Silicon NPN Power Transistors
2N6307	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N6307	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3
2N6307	CENTRAL	获取价格	NPN SILICON TRANSISTOR
2N6307	NJSEMI	获取价格	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
2N6307-BP	MCC	获取价格	Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N6307LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N6307M	NJSEMI	获取价格	Trans GP BJT NPN 300V 8A 3-Pin(2+Tab) TO-3 Sleeve
2N6308	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3