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2N6283 PDF预览

2N6283

更新时间: 2024-01-01 16:24:49
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 114K
描述
Silicon NPN Power Transistors

2N6283 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TO-3
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.06Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):20 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):750JEDEC-95代码:TO-204AA
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

2N6283 数据手册

 浏览型号2N6283的Datasheet PDF文件第2页浏览型号2N6283的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6282 2N6283 2N6284  
DESCRIPTION  
·With TO-3 package  
·Complement to type 2N6285/6286/6287  
·High DC current gain  
·DARLINGTON  
APPLICATIONS  
·For use in general-purpose amplifier and  
low-frequency switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
60  
UNIT  
2N6282  
2N6283  
2N6284  
2N6282  
2N6283  
2N6284  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
100  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
A
W
20  
Collector current-peak  
Base current  
40  
0.5  
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
160  
200  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.09  
/W  

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