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2N6258 PDF预览

2N6258

更新时间: 2024-01-19 00:47:22
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 110K
描述
Silicon NPN Power Transistors

2N6258 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code:unknown风险等级:5.44
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):30 A配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):0.8 MHzBase Number Matches:1

2N6258 数据手册

 浏览型号2N6258的Datasheet PDF文件第2页浏览型号2N6258的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6258  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
APPLICATIONS  
·Designed for audio amplifier and  
switching circuits applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
100  
80  
UNIT  
V
Open base  
V
Open collector  
5
V
30  
A
IB  
Base current  
7.5  
A
PD  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
250  
150  
-65~200  
W
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
0.875  
/W  

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