Datasheet > 2N6134

2N6134

更新时间： 2024-11-01 06:26:19

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	93K
描述
Silicon PNP Power Transistors

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2N6134 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6132 2N6133 2N6134

DESCRIPTION

·With TO-220 package

·High power dissipation

·Complement to NPN type :

2N6129 2N6130 2N6131

APPLICATIONS

·Power amplifier and medium speed

switching applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220) and symbol

Base

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

-40

UNIT

2N6132

2N6133

2N6134

2N6132

2N6133

2N6134

V_CBO

Collector-base voltage

Open emitter

Open base

-60

-80

-40

V_CEO

Collector-emitter voltage

-60

-80

V_EBO

I_C

Emitter-base voltage

Collector current

Open collector

T_C=25ꢀ

-5

ꢀ

-7

I_B

Base current

-3

P_T

T_j

Total power dissipation

Junction temperature

Storage temperature

150

-65~150

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

2.5

ꢀ/W

12 3

中文翻译

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2N6146	MOTOROLA	获取价格	SILICON BIDIRECTIOANAL TRIODE THYRISTORS
2N6146	NJSEMI	获取价格	TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS
2N6147	MOTOROLA	获取价格	SILICON BIDIRECTIOANAL TRIODE THYRISTORS
2N6147	NJSEMI	获取价格	TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS
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