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2N6075B PDF预览

2N6075B

更新时间： 2024-10-29 22:45:03
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
8页 123K
描述
Sensitive Gate Triacs

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中文翻译

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2N6075B 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TO-225
包装说明：CASE 77-09, 3 PIN针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.30.00.80Factory Lead Time：1 week
风险等级：5.19Is Samacsys：N
其他特性：CMOS COMPATIBLE外壳连接：ISOLATED
配置：SINGLE最大直流栅极触发电流：15 mA
最大直流栅极触发电压：2.5 V最大维持电流：30 mA
JEDEC-95代码：TO-225JESD-30 代码：R-PSFM-T3
JESD-609代码：e0最大漏电流：2 mA
元件数量：1端子数量：3
最高工作温度：110 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：240
认证状态：Not Qualified最大均方根通态电流：4 A
断态重复峰值电压：600 V子类别：TRIACs
表面贴装：NO端子面层：Tin/Lead (Sn80Pb20)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：30触发设备类型：4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：1

2N6075B 数据手册

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Preferred Device  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave ac control applications, such as  
light dimmers, motor controls, heating controls and power supplies; or  
wherever full-wave silicon gate controlled solid-state devices are  
needed. Triac type thyristors switch from a blocking to a conducting  
state for either polarity of applied anode voltage with positive or  
negative gate triggering.  
http://onsemi.com  
TRIACS  
4 AMPERES RMS  
200 thru 600 VOLTS  
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling  
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit  
Logic Functions  
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B  
• Blocking Voltages to 600 Volts  
• All Diffused and Glass Passivated Junctions for Greater Parameter  
Uniformity and Stability  
MT2  
MT1  
• Small, Rugged, Thermopad Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
• Device Marking: Device Type, e.g., 2N6071A, Date Code  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
*Peak Repetitive Off-State Voltage  
V
Volts  
DRM,  
(T = 40 to 110°C, Sine Wave,  
50 to 60 Hz, Gate Open)  
2N6071A,B  
V
RRM  
J
200  
400  
600  
2N6073A,B  
2N6075A,B  
3
2
1
*On-State RMS Current (T = 85°C)  
Full Cycle Sine Wave 50 to 60 Hz  
I
4.0  
Amps  
Amps  
C
T(RMS)  
TO–225AA  
(formerly TO–126)  
CASE 077  
*Peak Non–repetitive Surge Current  
I
30  
TSM  
(One Full cycle, 60 Hz, T = +110°C)  
J
STYLE 5  
2
2
Circuit Fusing Considerations  
(t = 8.3 ms)  
I t  
3.7  
10  
A s  
PIN ASSIGNMENT  
*Peak Gate Power  
P
Watts  
Watt  
Volts  
°C  
GM  
1
2
3
Main Terminal 1  
(Pulse Width ≤ 1.0 µs, T = 85°C)  
C
Main Terminal 2  
Gate  
*Average Gate Power  
P
0.5  
5.0  
G(AV)  
(t = 8.3 ms, T = 85°C)  
C
*Peak Gate Voltage  
V
GM  
(Pulse Width ≤ 1.0 µs, T = 85°C)  
C
ORDERING INFORMATION  
*Operating Junction Temperature Range  
T
J
–40 to  
+110  
Device  
2N6071A  
2N6071B  
2N6073A  
2N6073B  
Package  
TO225AA  
TO225AA  
TO225AA  
TO225AA  
Shipping  
500/Box  
500/Box  
500/Box  
500/Box  
*Storage Temperature Range  
T
–40 to  
+150  
°C  
stg  
(2)  
Mounting Torque (6-32 Screw)  
—
8.0  
in. lb.  
*Indicates JEDEC Registered Data.  
(1) V and V for all types can be applied on a continuous basis. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
(2) Torque rating applies with use of a compression washer. Mounting torque in  
excess of 6 in. lb. does not appreciably lower case-to-sink thermal  
resistance. Main terminal 2 and heatsink contact pad are common.  
DRM RRM  
2N6075A  
2N6075B  
TO225AA  
TO225AA  
500/Box  
500/Box  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
May, 2000 – Rev. 3  
2N6071/D  
12345678

中文翻译

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与2N6075B相关器件

型号 品牌 获取价格 描述 数据表
2N6075B-1 MOTOROLA

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 		4 Quadrant Logic Level TRIAC, 600V V(DRM), 4A I(T)RMS, TO-225AA
2N6075B-11 MOTOROLA

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 		4 Quadrant Logic Level TRIAC, 600V V(DRM), 4A I(T)RMS, TO-225AA
2N6075B-12 MOTOROLA

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 		4 Quadrant Logic Level TRIAC, 600V V(DRM), 4A I(T)RMS, TO-225AA
2N6075B-2 MOTOROLA

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 		600V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225AA
2N6075B-3 MOTOROLA

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 		600V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225AA
2N6075B-5 MOTOROLA

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 		600V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225AA
2N6075BG ONSEMI

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 		Sensitive Gate Triacs Silicon Bidirectional Thyristors
2N6075BG LITTELFUSE

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 		该三端双向可控硅主要用于全波交流控制应用，例如灯光调节器、电机控制、加热控制与电源；或用于
2N6075BHR DIGITRON

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 		TRIAC
2N6075BLEADFREE CENTRAL

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 		4 Quadrant Logic Level TRIAC, 600V V(DRM), 4A I(T)RMS, TO-126, TO-126, 3 PIN

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