Order this document
by 2N6071/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Thyristors
*Motorola preferred devices
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
•
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL,
CMOS and Operational Amplifier Integrated Circuit Logic Functions
Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
Blocking Voltages to 600 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
•
•
MT1
MT2
G
•
Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MT2
CASE 77-08
(TO-225AA)
STYLE 5
G
MT2
MT1
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
*Peak Repetitive Off-State Voltage
V
DRM
Volts
(Gate Open, T = 25 to 110°C)
2N6071A,B
2N6073A,B
2N6075A,B
200
400
600
J
*On-State Current RMS (T = 85°C)
I
4
Amps
Amps
C
T(RMS)
*Peak Surge Current
I
30
TSM
(One Full cycle, 60 Hz, T = –40 to +110°C)
J
2
I t
2
A s
Circuit Fusing Considerations
(t = 8.3 ms)
3.7
*Peak Gate Power
P
10
0.5
5
Watts
Watt
GM
*Average Gate Power
P
G(AV)
*Peak Gate Voltage
V
GM
Volts
*Indicates JEDEC Registered Data.
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
1
Motorola Thyristor Device Data
Motorola, Inc. 1998