5秒后页面跳转
2N6071BTG PDF预览

2N6071BTG

更新时间: 2024-11-20 03:56:19
品牌 Logo 应用领域
安森美 - ONSEMI 可控硅三端双向交流开关局域网
页数 文件大小 规格书
8页 75K
描述
Sensitive Gate Triacs Silicon Bidirectional Thyristors

2N6071BTG 数据手册

 浏览型号2N6071BTG的Datasheet PDF文件第2页浏览型号2N6071BTG的Datasheet PDF文件第3页浏览型号2N6071BTG的Datasheet PDF文件第4页浏览型号2N6071BTG的Datasheet PDF文件第5页浏览型号2N6071BTG的Datasheet PDF文件第6页浏览型号2N6071BTG的Datasheet PDF文件第7页 
2N6071A/B Series  
Preferred Device  
Sensitive Gate Triacs  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave AC control applications, such as  
light dimmers, motor controls, heating controls and power supplies; or  
wherever full-wave silicon gate controlled solid-state devices are  
needed. Triac type thyristors switch from a blocking to a conducting  
state for either polarity of applied anode voltage with positive or  
negative gate triggering.  
http://onsemi.com  
TRIACS  
4.0 A RMS, 200 − 600 V  
Features  
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling  
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit  
Logic Functions  
MT2  
MT1  
Gate Triggering: 4 Mode − 2N6071A, B; 2N6073A, B; 2N6075A, B  
Blocking Voltages to 600 V  
G
All Diffused and Glass Passivated Junctions for Greater Parameter  
Uniformity and Stability  
Small, Rugged, Thermopad Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Device Marking: Device Type, e.g., 2N6071A, Date Code  
REAR VIEW  
SHOW TAB  
TO−225  
CASE 077  
STYLE 5  
3
2
1
MARKING DIAGRAM  
YWW  
2N  
607xyG  
1. Cathode  
2. Anode  
3. Gate  
x
y
= 1, 3, 5  
= A, B  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 7  
2N6071/D  

2N6071BTG 替代型号

型号 品牌 替代类型 描述 数据表
2N6071BG ONSEMI

完全替代

Sensitive Gate Triacs Silicon Bidirectional Thyristors

与2N6071BTG相关器件

型号 品牌 获取价格 描述 数据表
2N6071B-VA MOTOROLA

获取价格

200V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225AA
2N6071B-VB MOTOROLA

获取价格

200V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225AA
2N6071B-VD MOTOROLA

获取价格

200V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225AA
2N6071B-VE MOTOROLA

获取价格

4 Quadrant Logic Level TRIAC, 200V V(DRM), 4A I(T)RMS, TO-225AA
2N6071B-VK MOTOROLA

获取价格

200V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225AA
2N6071B-VP MOTOROLA

获取价格

4 Quadrant Logic Level TRIAC, 200V V(DRM), 4A I(T)RMS, TO-225AA
2N6071-PBF DIGITRON

获取价格

TRIAC
2N6071-VA MOTOROLA

获取价格

TRIAC, 200V V(DRM), 4A I(T)RMS, TO-225AA,
2N6071-VD MOTOROLA

获取价格

TRIAC, 200V V(DRM), 4A I(T)RMS, TO-225AA,
2N6071-VE MOTOROLA

获取价格

TRIAC, 200V V(DRM), 4A I(T)RMS, TO-225AA,