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2N6071B PDF预览

2N6071B

更新时间: 2024-09-12 22:45:03
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
8页 123K
描述
Sensitive Gate Triacs

2N6071B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-225
包装说明:CASE 77-09, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.19
其他特性:CMOS COMPATIBLE外壳连接:ISOLATED
配置:SINGLE最大直流栅极触发电流:15 mA
最大直流栅极触发电压:2.5 V最大维持电流:30 mA
JEDEC-95代码:TO-225JESD-30 代码:R-PSFM-T3
JESD-609代码:e0最大漏电流:2 mA
元件数量:1端子数量:3
最高工作温度:110 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
认证状态:Not Qualified最大均方根通态电流:4 A
断态重复峰值电压:200 V子类别:TRIACs
表面贴装:NO端子面层:Tin/Lead (Sn80Pb20)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

2N6071B 数据手册

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Preferred Device  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave ac control applications, such as  
light dimmers, motor controls, heating controls and power supplies; or  
wherever full-wave silicon gate controlled solid-state devices are  
needed. Triac type thyristors switch from a blocking to a conducting  
state for either polarity of applied anode voltage with positive or  
negative gate triggering.  
http://onsemi.com  
TRIACS  
4 AMPERES RMS  
200 thru 600 VOLTS  
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling  
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit  
Logic Functions  
Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B  
Blocking Voltages to 600 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter  
Uniformity and Stability  
MT2  
MT1  
Small, Rugged, Thermopad Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Device Marking: Device Type, e.g., 2N6071A, Date Code  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
*Peak Repetitive Off-State Voltage  
V
Volts  
DRM,  
(T = 40 to 110°C, Sine Wave,  
50 to 60 Hz, Gate Open)  
2N6071A,B  
V
RRM  
J
200  
400  
600  
2N6073A,B  
2N6075A,B  
3
2
1
*On-State RMS Current (T = 85°C)  
Full Cycle Sine Wave 50 to 60 Hz  
I
4.0  
Amps  
Amps  
C
T(RMS)  
TO–225AA  
(formerly TO–126)  
CASE 077  
*Peak Non–repetitive Surge Current  
I
30  
TSM  
(One Full cycle, 60 Hz, T = +110°C)  
J
STYLE 5  
2
2
Circuit Fusing Considerations  
(t = 8.3 ms)  
I t  
3.7  
10  
A s  
PIN ASSIGNMENT  
*Peak Gate Power  
P
Watts  
Watt  
Volts  
°C  
GM  
1
2
3
Main Terminal 1  
(Pulse Width 1.0 µs, T = 85°C)  
C
Main Terminal 2  
Gate  
*Average Gate Power  
P
0.5  
5.0  
G(AV)  
(t = 8.3 ms, T = 85°C)  
C
*Peak Gate Voltage  
V
GM  
(Pulse Width 1.0 µs, T = 85°C)  
C
ORDERING INFORMATION  
*Operating Junction Temperature Range  
T
J
–40 to  
+110  
Device  
2N6071A  
2N6071B  
2N6073A  
2N6073B  
Package  
TO225AA  
TO225AA  
TO225AA  
TO225AA  
Shipping  
500/Box  
500/Box  
500/Box  
500/Box  
*Storage Temperature Range  
T
–40 to  
+150  
°C  
stg  
(2)  
Mounting Torque (6-32 Screw)  
8.0  
in. lb.  
*Indicates JEDEC Registered Data.  
(1) V and V for all types can be applied on a continuous basis. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
(2) Torque rating applies with use of a compression washer. Mounting torque in  
excess of 6 in. lb. does not appreciably lower case-to-sink thermal  
resistance. Main terminal 2 and heatsink contact pad are common.  
DRM RRM  
2N6075A  
2N6075B  
TO225AA  
TO225AA  
500/Box  
500/Box  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
May, 2000 – Rev. 3  
2N6071/D  

2N6071B 替代型号

型号 品牌 替代类型 描述 数据表
2N6071BTG LITTELFUSE

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2N6071BG LITTELFUSE

功能相似

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Sensitive Gate Triacs Silicon Bidirectional Thyristors
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Sensitive Gate Triacs Silicon Bidirectional Thyristors