生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.6 |
Is Samacsys: | N | 最大集电极电流 (IC): | 20 A |
配置: | Single | 最小直流电流增益 (hFE): | 30 |
最高工作温度: | 200 °C | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 100 W | 子类别: | Other Transistors |
表面贴装: | NO | 标称过渡频率 (fT): | 20 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N5958E3 | MICROSEMI | Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, |
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2N5959 | ETC | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | TO-210AC |
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2N5959E3 | MICROSEMI | Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, |
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2N5960 | MICROSEMI | Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin, |
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2N5961 | FAIRCHILD | NPN General Purpose Amplifier |
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2N5961 | CENTRAL | NPN SILICON TRANSISTOR |
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