Datasheet > 2N5886

2N5886

更新时间： 2024-09-28 06:16:31

品牌	Logo	应用领域
SAVANTIC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	113K
描述
Silicon NPN Power Transistors

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2N5886 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5885 2N5886

DESCRIPTION

·With TO-3 package

·Complement to type 2N5883 2N5884

·High power dissipations

APPLICATIONS

·They are intended for use in power linear

and switching applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5885

2N5886

2N5885

2N5886

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

ꢀ

Collector current-peak

Base current

7.5

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

200

-65~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

0.875

ꢀ/W

12 3

中文翻译

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与2N5886相关器件

型号	品牌	获取价格	描述	数据表
2N5886G	ONSEMI	获取价格	Complementary Silicon High−Power Transistors
2N5886G	NJSEMI	获取价格	Trans GP BJT NPN 80V 25A 3-Pin(2+Tab) TO-204 Tray
2N5887	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 7A I(C) \| TO-66
2N5888	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 7A I(C) \| TO-66
2N5889	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 7A I(C) \| TO-66
2N5890	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 35V V(BR)CEO \| 7A I(C) \| TO-66
2N5891	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 7A I(C) \| TO-66
2N5892	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 7A I(C) \| TO-66
2N5893	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 7A I(C) \| TO-66
2N5894	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 35V V(BR)CEO \| 7A I(C) \| TO-66