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2N5882/D PDF预览

2N5882/D

更新时间: 2024-02-11 14:40:22
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 95K
描述
Silicon NPN High Power Transistor

2N5882/D 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.74
最大集电极电流 (IC):15 A基于收集器的最大容量:400 pF
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):4最大降落时间(tf):800 ns
JEDEC-95代码:TO-3JESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):160 W最大上升时间(tr):700 ns
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
VCEsat-Max:4 VBase Number Matches:1

2N5882/D 数据手册

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ON Semiconductort  
Silicon NPN High-Power  
Transistor  
2N5882  
ON Semiconductor Preferred Device  
. . . designed for general–purpose power amplifier and switching  
applications.  
15 AMPERE  
SILICON  
POWER TRANSISTOR  
80 VOLTS  
Collector–Emitter Sustaining Voltage —  
V
= 80 Vdc (Min)  
CEO(sus)  
DC Current Gain —  
= 20 (Min) @ I = 6.0 Adc  
h
FE  
160 WATTS  
C
Low Collector — Emitter Saturation Voltage —  
= 1.0 Vdc (Max) @ I = 7.0 Adc  
V
CE(sat)  
C
High Current — Gain–Bandwidth Product —  
f = 4.0 MHz (Min) @ I = 1.0 Adc  
T
C
MAXIMUM RATINGS (1)  
Rating  
Symbol  
Max  
Unit  
CASE 1–07  
TO–204AA  
(TO–3)  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
80  
80  
Vdc  
Vdc  
Vdc  
Adc  
CEO  
V
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
15  
30  
Base Current  
I
B
5.0  
Adc  
Total Device Dissipation @ T = 25_C  
P
160  
0.915  
Watts  
C
D
Derate above 25_C  
W/_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +200  
_C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
1.1  
_C/W  
JC  
(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and  
re–registration reflecting these changes has been requested. All above values meet or  
exceed present JEDEC registered data.  
160  
140  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
2N5882/D  

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