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2N5876 PDF预览

2N5876

更新时间: 2024-11-18 06:18:11
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页数 文件大小 规格书
3页 113K
描述
Silicon PNP Power Transistors

2N5876 数据手册

 浏览型号2N5876的Datasheet PDF文件第2页浏览型号2N5876的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N5875 2N5876  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
·Complement to type 2N5877 2N5878  
APPLICATIONS  
·For general-purpose power amplifier  
and switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-60  
UNIT  
2N5875  
2N5876  
2N5875  
2N5876  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
-5  
V
A
A
A
W
-10  
Collector current-peak  
Base current  
-20  
-4  
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
150  
200  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.17  
/W  

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