型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5876E3 | MICROSEMI |
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Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
2N5876LEADFREE | CENTRAL |
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Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 | |
2N5877 | SEME-LAB |
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Bipolar NPN Device in a Hermetically sealed TO3 | |
2N5877 | ISC |
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Silicon NPN Power Transistors | |
2N5877 | SAVANTIC |
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Silicon NPN Power Transistors | |
2N5877 | MOSPEC |
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POWER TRANSISTORS(10A,150W) | |
2N5877 | NJSEMI |
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COMPLEMENTARY SILICON POWER TRANSISTORS | |
2N5877 | ASI |
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Power Bipolar Transistor, 10A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 P | |
2N5877 | MICROSEMI |
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Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL | |
2N5877 | CENTRAL |
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60V,10A,150W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Swi |