是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-3 |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.14 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
JEDEC-95代码: | TO-204AA | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 4 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5875T | NJSEMI |
获取价格 |
Trans GP BJT PNP 60V 10A 3-Pin(2+Tab) TO-3 Sleeve | |
2N5876 | MOSPEC |
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POWER TRANSISTORS(10A,150W) | |
2N5876 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2N5876 | ISC |
获取价格 |
Silicon PNP Power Transistors | |
2N5876 | SEME-LAB |
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Bipolar PNP Device in a Hermetically sealed TO3 | |
2N5876 | NJSEMI |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
2N5876 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
2N5876 | ASI |
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Power Bipolar Transistor, 10A I(C), 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 P | |
2N5876 | CENTRAL |
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Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 | |
2N5876E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, |