Datasheet > 2N5875

2N5875

更新时间： 2024-11-18 06:18:11

品牌	Logo	应用领域
SAVANTIC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	113K
描述
Silicon PNP Power Transistors

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中文翻译

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2N5875 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5875 2N5876

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

·Complement to type 2N5877 2N5878

APPLICATIONS

·For general-purpose power amplifier

and switching applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

-60

UNIT

2N5875

2N5876

2N5875

2N5876

V_CBO

Collector-base voltage

Open emitter

-80

-60

V_CEO

Collector-emitter voltage

Open base

-80

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

-5

ꢀ

-10

Collector current-peak

Base current

-20

-4

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

200

-65~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

1.17

ꢀ/W

12 3

中文翻译

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与2N5875相关器件

型号	品牌	获取价格	描述	数据表
2N5875T	NJSEMI	获取价格	Trans GP BJT PNP 60V 10A 3-Pin(2+Tab) TO-3 Sleeve
2N5876	MOSPEC	获取价格	POWER TRANSISTORS(10A,150W)
2N5876	SAVANTIC	获取价格	Silicon PNP Power Transistors
2N5876	ISC	获取价格	Silicon PNP Power Transistors
2N5876	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
2N5876	NJSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
2N5876	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
2N5876	ASI	获取价格	Power Bipolar Transistor, 10A I(C), 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 P
2N5876	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2
2N5876E3	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,