生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 7 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-3 |
JESD-30 代码: | O-MBFM-P2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 4 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5874 | ASI |
获取价格 |
Transistor | |
2N5874 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL C | |
2N5874 | NJSEMI |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
2N5874 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. | |
2N5874 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2N5874 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2N5874E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL C | |
2N5875 | ASI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 P | |
2N5875 | MICROSEMI |
获取价格 |
暂无描述 | |
2N5875 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO3 |