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2N5872 PDF预览

2N5872

更新时间: 2024-11-18 06:18:07
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 111K
描述
Silicon PNP Power Transistors

2N5872 数据手册

 浏览型号2N5872的Datasheet PDF文件第2页浏览型号2N5872的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N5871 2N5872  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
APPLICATIONS  
·For medium-speed switching and  
amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-60  
UNIT  
2N5871  
2N5872  
2N5871  
2N5872  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
-5  
V
A
W
-7  
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
115  
150  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.17  
/W  

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