是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-3 |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.2 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 7 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-204AA |
JESD-30 代码: | O-MBFM-P2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5871E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
2N5872 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package | |
2N5872 | ISC |
获取价格 |
Silicon PNP Power Transistors | |
2N5872 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2N5872 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
2N5872 | ASI |
获取价格 |
Transistor | |
2N5872 | NJSEMI |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
2N5873 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2N5873 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2N5873 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |