2N5868

更新时间： 2024-11-20 06:18:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
3页	119K
描述
Silicon PNP Power Transistors

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N5868 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

2N5868 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5867 2N5868

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

APPLICATIONS

·For medium-speed switching and

amplifier applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-60

UNIT

2N5867

2N5868

2N5867

2N5868

V_CBO

Collector-base voltage

Open emitter

-80

-60

V_CEO

Collector-emitter voltage

Open base

-80

V_EBO

I_C

Emitter-base voltage

Collector current

Open collector

-5

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25℃

87.5

150

℃

T_stg

-65~200

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

1.17

℃/W

12 3

中文翻译

下载PDF

与2N5868相关器件

型号	品牌	获取价格	描述	数据表
2N5868E3	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
2N5869	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N5869	ISC	获取价格	Silicon NPN Power Transistors
2N5869	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 P
2N587	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 200MA I(C) \| TO-5
2N5870	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
2N5870	ISC	获取价格	Silicon NPN Power Transistors
2N5870	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N5871	NJSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
2N5871	SAVANTIC	获取价格	Silicon PNP Power Transistors