Datasheet > 2N5868

2N5868

更新时间： 2024-11-20 05:56:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	111K
描述
Silicon PNP Power Transistors

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中文翻译

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2N5868 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5867 2N5868

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

APPLICATIONS

·For medium-speed switching and

amplifier applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

-60

UNIT

2N5867

2N5868

2N5867

2N5868

V_CBO

Collector-base voltage

Open emitter

-80

-60

V_CEO

Collector-emitter voltage

Open base

-80

V_EBO

I_C

Emitter-base voltage

Collector current

Open collector

-5

ꢀ

-5

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

87.5

150

-65~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

1.17

ꢀ/W

12 3

中文翻译

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2N5868E3	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
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