生命周期: | Active | Reach Compliance Code: | unknown |
风险等级: | 5.67 | 安装特点: | THROUGH HOLE MOUNT |
最大通态电流: | 0.25 A | 最高工作温度: | 100 °C |
最低工作温度: | -40 °C | 光电设备类型: | PHOTO DARLINGTON |
最大功率耗散: | 0.25 W | 子类别: | Photo Transistors |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5778 | NJSEMI |
获取价格 |
SILICON TRANSISTORS |
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2N5779 | NJSEMI |
获取价格 |
SILICON TRANSISTORS |
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2N5780 | NJSEMI |
获取价格 |
SILICON TRANSISTORS |
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2N5781 | NJSEMI |
获取价格 |
SI PNP POWER BJT |
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2N5781 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
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2N5781 | CENTRAL |
获取价格 |
Small Signal Transistors |
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2N5781 | ROCHESTER |
获取价格 |
3500mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
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2N5781_06 | SEME-LAB |
获取价格 |
SILICON EPITAXIAL PNP TRANSISTOR |
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2N5781LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, |
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2N5781PBFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, |
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