2N5737

更新时间： 2024-11-15 06:22:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	40K
描述
isc Silicon PNP Power Transistors

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中文翻译

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技术参数
数据手册

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2N5737 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

2N5737 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

2N5737

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -60V(Min.)

·Low Collector Saturation Voltage-

: V_CE(sat)= -0.5V(Max.)@ I_C= -5A

·Wide Area of Safe Operation

APPLICATIONS

·Designed for general-purpose power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

VALUE

-60

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-60

-5

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

-10

I_CM

-20

I_B

-4

Collector Power Dissipation

@T_C=100℃

P_C

℃

T_J

Junction Temperature

Storage Temperature

150

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Ambient

0.5

℃/W

R_{th j-a}

isc Website：www.iscsemi.cn

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