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2N5630 PDF预览

2N5630

更新时间: 2024-11-24 06:17:39
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
3页 118K
描述
Silicon NPN Power Transistors

2N5630 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

2N5630 数据手册

 浏览型号2N5630的Datasheet PDF文件第2页浏览型号2N5630的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5629 2N5630  
DESCRIPTION  
·With TO-3 package  
·Complement to type 2N6029 2N6030  
APPLICATIONS  
·For high voltage and high power  
amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
100  
120  
100  
120  
7
UNIT  
2N5629  
2N5630  
2N5629  
2N5630  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
16  
Collector current-peak  
Base current  
20  
A
5.0  
A
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
200  
200  
-65~200  
W
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
0.875  
/W  

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