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2N5623 PDF预览

2N5623

更新时间: 2024-11-24 05:57:51
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页数 文件大小 规格书
3页 111K
描述
Silicon PNP Power Transistors

2N5623 数据手册

 浏览型号2N5623的Datasheet PDF文件第2页浏览型号2N5623的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627  
DESCRIPTION  
·With TO-3 package  
·Excellent safe operating area  
·Low collector saturation voltage  
APPLICATIONS  
·For audio and general-purpose  
applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-80  
UNIT  
2N5621  
VCBO  
Collector-base voltage  
Open emitter  
V
2N5623/5625  
2N5627  
-100  
-120  
-60  
2N5621  
VCEO  
Collector-emitter voltage  
Open base  
Open collector  
TC=25ꢀ  
V
2N5623/5625  
2N5627  
-80  
-100  
-5  
VEBO  
IC  
Emitter-base voltage  
Collector current  
V
A
W
-10  
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
100  
150  
Tstg  
-65~200  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.5  
/W  

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